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SEMICONDUCTOR
TECHNICAL DATA
High Voltage Switching. FEATURES
High Reliability. Small surface mounting type (SOT-23).
2 L E B
BAS21
SILICON EPITAXIAL PLANAR DIODE
L
DIM A
D
B C D E G H J
MILLIMETERS _ 2.93 + 0.20
1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7
3
A
G H
1
MAXIMUM RATING (Ta=25
CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Continuous Forward Current Surge Current (10mS) Power Dissipation Junction Temperature Storage Temperature Range
)
SYMBOL VRM VR IF IFSM PD Tj Tstg RATING 300 250 250 2 250* mW 300** 150 -55150 E E UNIT V
C N
P P
K L M N P
V mA A
1. NC 2. ANODE 3. CATHODE
M
K
J
3
2
1
SOT-23
* Note1 : Package Mounted On FR-5 Board (25.4 19.05 1.57mm) ** Note2 : Package Mounted On 99.5% Alumina (10 8 0.6mm)
Marking
Type Name
Lot No.
H9
ELECTRICAL CHARACTERISTICS (Ta=25E
CHARACTERISTIC Forward Voltage Reverse Current Total Capacitance Reverse Recovery Time
)
TEST CONDITION IF=150mA VR=250V VR=300V VR=0V, f=1MHz IR=30mA, IF=30mA MIN. TYP. MAX. 1.25 0.2 100 3 100 UNIT V i A pF nS
SYMBOL VF IR(1) IR(2) CT trr
2009. 1. 23
Revision No : 1
1/2
BAS21
I F - VF
10 5 10
4
IR - VR
100 REVERSE CURRENT I R (nA)
Ta=25 C
Ta=25 C
FORWARD CURRENT I F (A)
10 3 10 2 10 1 0.1 0.01 0.001 0.0001 0 200 400 600 800 1000 1200
10
1
0.1
0
50
100
150
200
250
300
FORWARD VOLTAGE VF (mV)
REVERSE VOLTAGE VR (V)
C T - VR
TERMINAL CAPACITANCE C T (pF) 1.5 1.4 1.3 1.2 1.1 1.0
f=1MHz Ta=25 C
0
10
20
30
REVERSE VOLTAGE VR (V)
2009. 1. 23
Revision No : 1
2/2

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